SaM - Behaviour of Semiconductors at Different Temperatures

Memory Card

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Semiconductor Type:	Intrinsic	Extrinsic
Low Temperatures	$n=\sqrt{N_C{N}_V}e-\frac{E_g}{2kT}$	$n\simeq \sqrt{\frac{N_C{N}_V}{g_D}}e-\frac{E_C-E_D}{2kT}$
Intermidiate Temperatures	$n=\sqrt{N_C{N}_V}e-\frac{E_g}{2kT}$	$n\simeq N_A$
High Temperaturs	$n=\sqrt{N_C{N}_V}e-\frac{E_g}{2kT}$	$n\simeq \sqrt{N_C{N}_V}e-\frac{E_g}{2kT}$

• Remeber that also $E_g$ depends on temperature.
• $E_D$ was defined here, as the Donor Level or Energy Level.
• $E_C$ : Conduction Band lowest energy level (by definition)
• $N_A$ : first seen here, and is the “density of acceptors”
• $g_D$ : degeneracy factor (“fattore di degenerazione”)

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